Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser

Siming Chen, K. J. Zhou, Z.Y. Zhang, Osamu Wada, David Childs, Maxime Hugues, Xiao Jin, R. A. Hogg

Electronics Letters · 2012 · 12 citations · 9 references

Concepts

Abstract

A hybrid quantum well/quantum dot active region is used to obtain simultaneous three-state lasing at room temperature, via ground state and first excited state transitions of the quantum dots and the lowest energy transition of a single quantum well. The device exhibits a threshold current density of 1125 A/cm2 for achieving simultaneous three-state lasing over ∼160 nm.

References

9