Applied Physics Letters · 2009 · 25 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum DotsQuantum OptoelectronicsQuantum TunnelingQuantum WellsSemiconductor PhysicsEffective MassEffective Mass ApproximationOptical TransitionsPhotoluminescencePhotoluminescence In Quantum WellsPhotoluminescence SpectroscopyQuantum Dot PhotophysicsTunneling In Quantum Well Structures
We present optical studies of quantum dot tunnel injection structures for 1.3 μm emission with an InGaAsN quantum well injector. Photoreflectance spectroscopy supported by effective mass calculations within the band anticrossing model has been used to identify the optical transitions. Based on that, an evidence of the tunneling from the injector well to the dots could be detected by photoluminescence excitation up to the free carrier regime at room temperature. The latter finds confirmation in shortened photoluminescence rise times, when compared to the injector-free quantum dot reference structure.
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Band Anticrossing in GaInNAs Alloys
W. Walukiewicz, Joel W. Ager, E. E. Haller et al. · Physical Review Letters · 1999 · 1.6K citations
1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
O.B. Shchekin, D.G. Deppe · Applied Physics Letters · 2002 · 350 citations