Applied Physics Letters · 1985 · 42 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand AlignmentCapacitance-voltage MeasurementsCapacitance-voltage RelationsDepletion RegionEpitaxial Film GrowthHeterojunctionsHeterostructuresSemiconductor Heterojunctions
The preparation of n-MoSe2/p-WSe2 heterojunctions by epitaxial growth of WSe2 (Eg=1.16 eV) on MoSe2 (Eg=1.06 eV) substrates is reported. The two semiconductors are nearly lattice matched along their hexagonal (001) base plane with Δa/a=0.25%. Diode capacitance-voltage measurements show that the band edges of MoSe2 and WSe2 are aligned within ∼0.1 eV. The diode forward current at room temperature is carried by recombination in the depletion region.
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