2010 · 28 citations · 4 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrostrip CircuitsMixed-signal Integrated Circuit DesignPower DividersRadio-frequency Integrated CircuitsClock Power DissipationDividersHigh-frequency ElectronicsLatchesStatic Power Dissipation
We present a static divide-by-8 frequency divider with a record maximum clock frequency of 204.8GHz, designed and fabricated using 250nm InP HBTs (400GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">τ</sub> , 650GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) with a 4-metal layer, inverted thin-film microstrip wiring environment. The divider is fully static down to 4.0GHz operation. The total power dissipation is 1.82W, of which 592mW is consumed by the input-stage divider. The divider latches are formed using emitter-coupled-logic (ECL), and inductive peaking is used in series with the load resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</sub> to minimize gate delays for highest possible divider clock rates. The circuit contains 108 HBTs and its size is 0.68 x 0.45-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
4
110-GHz static frequency divider in SiGe bipolar technology
Saverio Trotta, H. Knapp, T.F. Meister et al. · 2005 · 28 citations
Advanced InP DHBT process for high speed LSI circuits
Miguel Urteaga, R.L. Pierson, Petra Rowell et al. · 2008 · 20 citations
A 0.25 $\mu$m InP DHBT 200 GHz+ Static Frequency Divider
M. D'Amore, C. Monier, Steven Lin et al. · IEEE Journal of Solid-State Circuits · 2010 · 19 citations
Engineering, Computer Engineering, Electrical Engineering +15