Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

Abstract

We report an experimental determination of the doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Low temperature transport measurements down to 360mK and temperature dependent Raman experiments down to 5K, together with secondary ion mass spectroscopy profiling, suggest a critical aluminum concentration lying between 6.4 and 8.7×1020cm−3 for the metal-insulator transition in these epilayers grown by the vapor-liquid-solid technique. Preliminary indications of a superconducting transition in the metallic sample are presented.