Applied Physics Letters · 1996 · 173 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsQuantum Well DevicesQuantum WellsSemiconductor LasersContinuous OperationDiode Laser Threshold CurrentEmission SpectraQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser DiodesThermal Management In Semiconductor Lasers
Continuous-wave (cw) operation of InGaN multiquantum-well-structure laser diodes (LDs) was demonstrated at 233 K. The threshold current and voltage of the LD were 210 mA and 11 V, respectively. During room-temperature cw operation, the LDs were easily broken within one second due to heat generation. At 233 K, the lifetime of the LDs was longer than 30 min, and the emission spectra could be measured under cw operation. Only a single peak was observed under cw operation with increasing forward current above the threshold current. The characteristic temperature of the threshold current of the LDs was 162 K.