Semipolar (112) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates

Abstract

Abstract Abstractauthoren InGaN multiple quantum well light‐emitting diodes (LEDs) were grown on chemically–mechanically polished (11 2) GaN templates (up to 100 mm diameter wafers) by metalorganic vapour phase epitaxy. Initial GaN overgrowth on the polished templates in nitrogen ambient maintained the polished surface. The peak emission wavelength of the LEDs varied from 445 to 550 nm. In contrast to the simultaneously grown LEDs on as‐grown templates, the LEDs on polished templates have very smooth surface morphology, uniform luminescence, and higher output power. Fluorescence images of 445 nm LEDs grown on (a) as‐grown and (b) polished (11 2) GaN templates.