2004 · 24 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsSemiconductor DefectsSemiconductor ReliabilityDevice DegradationGate Oxide DegradationGate Oxide ReliabilityReliability DegradationReliability Degradation MechanismsSaturationSaturation BehaviorWear-out Mechanisms
Negative Bias Temperature Instability of p-MOSFETs is investigated under various stress gate voltages and temperatures. It is shown that degradation tends to saturate and the dependence of lifetime on electric field (Eox) is expressed as a power-law of Eox. We propose new empirical and kinetic models. The Eox dependence of the lifetime described by the power-law is derived from our empirical model describing the saturation of degradation. Moreover, our kinetic model explains the saturation behavior.
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