Characterization of Phosphorus Pile‐Up at the SiO2 / Si Interface

Abstract

Phosphorus pile‐up at the interface and how its location affects n‐well doping concentration are described. The pile‐up is first shown to be situated on the side of the interface, and then the amount of phosphorus involved is determined quantitatively. Doping concentration decreases during n‐well processes, and the decrease is due to removal of the pile‐up layer with removal of .