Publication | Closed Access
Mechanism of Nonlinear Switching in HfO<sub>2</sub>-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
76
Citations
29
References
2015
Year
Electrical EngineeringEngineeringTunneling MicroscopyCrossbar RramEmerging Memory TechnologyElectronic MemoryCondensed Matter PhysicsApplied PhysicsQuantum MaterialsNonlinear Switching MechanismTin Bottom ElectrodeMemory DeviceSemiconductor MemoryNonlinear SwitchingResistive Random-access MemoryMicroelectronicsLarge Bandgap
In this paper, the nonlinear switching mechanism of the Ti/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TiN crossbar structure resistive random access memory device with good reliability is investigated. The nonlinearity of the device can be revealed by inserting a large bandgap of an Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin layer between the TiN bottom electrode and the HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> switching film. The nonlinear switching mechanism caused by Flower-Nordheim tunneling involves the tunneling barrier of the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer. Besides, the nonlinear behavior is also sensitive to the thickness of the inserting Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer. A high nonlinear factor of 37, large endurance more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> , and good retention properties are achieved in the Ti/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (1-nm)/TiN structure.
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