A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate - Concepedia

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A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate

11

Citations

4

References

2001

Year

R. Difrenza, P. Llinarès, Gérard Morin, Éric Granger, G. Ghibaudo

Unknown Venue

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringMos Transistor GatePhysicsNanoelectronicsBias Temperature InstabilityRandom FluctuationsApplied PhysicsDopant NumberMicroelectronicsCircuit Simulation

References

	Year	Citations

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