Epitaxial Ge1-xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin

Abstract

We examined the epitaxial growth of Ge1−xSnx layers by using metal-organic chemical vapor deposition with tertiary-butyl-germane (TBGe) and tri-butyl-vinyl-tin (TBVSn) precursors. Combining TBGe and TBVSn reduces the growth temperature for Ge1−xSnx to as low as 280 °C, allowing for a high Sn content up to 3.9%. The grown Ge1−xSnx layers have a high crystalline quality without β-Sn precipitation and dislocations. Thus the combination of TBGe and TBVSn is promising for high-quality Ge1−xSnx epitaxy.