2015 · 14 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesLeakage Power ReductionMemory DevicesMemristive MaterialsPower ManagementShort-channel EffectsAnalog Switching BehaviorBandwidthElectrochemical Metallization CellsFilament MaterialsMemristive MemoryNonvolatile Memory MaterialsResistive Random-access MemoryResistive Switching Materials
We demonstrate sub-5nm filament based electrochemical metallization RRAM with self-limited program in a reliable and controllable manner. This RRAM removes the necessity for any external current compliance in a 1TnR (1S1R) architecture. Furthermore, we report a novel technique to amplify RRAM's intrinsic ON/OFF resistance ratio by a factor of >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> , which offers significant cell-, circuit- and system-level benefits such as reduced power, reduced BER and increased read bandwidth in high density RRAM.
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