Selective Removal of Si1 − x Ge x from (100) Si Using  HNO 3 and  HF

Abstract

The selective removal of epitaxial from (100) Si using an aqueous based etch consisting of nitric acid and trace hydrofluoric acid has been studied with respect to alloy composition, reaction mechanism, and surface smoothness. Selectivity, defined as the rate ratio of the layer removal to the (100) Si layer removal, was better than 100 for a 30% Ge alloy layer with an etch consisting of 35:20:10, (0.5%). The alloy etch rate increased with increasing Ge composition of the alloy in the germanium composition range of 10–50%. The presence of misfit dislocations was found to increase the etch rate compared to a fully strained alloy.