Symposium on VLSI Technology · 1987 · 11 citations · 0 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportCmos Circuit DesignDevice CharacterizationDevice ModelingDevice ReliabilitySemiconductor ReliabilityCmos ReliabilityDevice DegradationHot Carrier EffectsHot Carrier InjectionHot-carrier DegradationReliability DegradationReliability Degradation MechanismsWear-out Mechanisms
Hot-carrier induced MOSFET degradation is a serious problem in high density CMOS VLSIs. Recent major concern has been concentrated on device degradation under pulsed stress, because this corresponds to actual circuit operations. Although much work has been done on the hot-carrier problem, the degradation mechanism is not clear. One effective approach to investigating this mechanism is the pulsed stress experiment.