100 W L-band GaAs power FP-HFET operated at 30 V

Abstract

This paper reports an L-band power AlGaAs/GaAs heterostructure FET with a field-modulating plate (FP-HFET), which accomplished 100 W output power with a high power density of 1.16 W/mm at a drain bias voltage of 30 V. The developed FP-HFET is promising for achieving improved performance and reduced size of digital cellular base station systems.