Sub-10 nm imprint lithography and applications

Abstract

Nanoimprint lithography (NIL) is a new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designed to fabricate nanostructures inexpensively with high throughput. In this paper, we present significant new developments in achieving holes and dots with 6 nm feature size, 40 nm period on silicon, and 10 nm feature size, 40 nm period on a Au substrate. Moreover, we present an application of NIL to the fabrication of nanoscale compact disks (NanoCDs) of 400 Gbits/in/sup 2/ data density.