Publication | Closed Access
Single event gate rupture in commercial power MOSFETs
35
Citations
2
References
2002
Year
Unknown Venue
EngineeringNuclear PhysicsRadiation PhysicsPower ElectronicsIon ImplantationHigh Voltage EngineeringCommercial Power MosfetsIon EmissionElectrical EngineeringBias Temperature InstabilityPower Semiconductor DeviceTime-dependent Dielectric BreakdownSingle Event EffectsSingle Event BurnoutMicroelectronicsApplied PhysicsCircuit ReliabilityPower MosfetsHeavy Ions
Several types of power MOSFETs were irradiated with heavy ions to characterize either single event gate rupture (SEGR) or single event burnout (SEB). The implications of the data, showing temperature-dependence and beam angle-dependence for SEGR, are indicated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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