Transmission Electron Microscope Sample Preparation Using a Focused Ion Beam

Abstract

A focused ion beam (FIB) has been applied for transmission electron microscope (TEM) sample preparation. The sample tilt method is demonstrated to correct the cross-sectional taper shape of the TEM sample. The origin of the taper is discussed using the time-dependent surface development under the FIB trench milling. Additionally, the thickness of the damaged layer in the TEM sample is estimated to be about 10 nm from the Monte Carlo simulation of 30 keV gallium-implanted ion trajectories in a silicon target.