Optics Express · 2015 · 49 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesIntegrated OpticsIntegrated PhotonicsPhotodetectorsPhotonic Integrated CircuitsQuantum WellsSilicon PhotonicsHeterogeneous IntegrationIntegrated PhotodetectorsIntegrated Photonic DevicesPhotodiodesQuantum Well PhotodetectorsSilicon PhotodiodesSilicon Photonics IntegrationType-ii Quantum Wells
The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.
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III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects
Günther Roelkens, L. Liu, Di Liang et al. · Laser & Photonics Review · 2010 · 529 citations
High-speed detection at two micrometres with monolithic silicon photodiodes
Jason J. Ackert, David J. Thomson, Li Shen et al. · Nature Photonics · 2015 · 252 citations