Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates and Viscoelastic Behavior of SiO2 Films

Abstract

The relation between the force acting on film edges and dislocation generation in silicon substrates under the film edge is investigated. Samples with square patterns of are annealed at 600°–1200°C for 2 hr in atmosphere. The force acting on the film edge is evaluated from the fringe patterns observed in x‐ray section topographs. Dislocations generated at the film edge are observed using Secco etching. As a result, it is proved that temperature dependence of a critical force, (N/m), acting on the film edge in dislocation generation is represented by , where is 0.25 eV. Similar procedures are carried out for samples with films. A thin film inserted between the film and silicon substrate prevents the formation of dislocations in samples annealed at high temperatures. This suppression effect for dislocation generation is interpreted in terms of the viscoelastic behavior of films at high temperatures.