Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowires

Abstract

We report on detailed structural and morphological characterizations of InAs nanowires of 〈001〉, 〈111〉, and 〈112〉 crystallographic directions grown on (001)B InAs wafer substrates using high-resolution transmission electron microscopy. We find that 〈001〉-oriented InAs nanowires are cubic zincblende-type structure and free of planar defects. The 〈111〉- and 〈112〉-oriented InAs nanowires both have densely twinned (111) planar defects that are perpendicular and parallel to the growth direction, respectively. The cross sections of all three types of InAs nanowires are obtained from 3D reconstructions using electron tomography. The characteristics of the planar defects and the 3D wire shape should provide better estimations of microstructure-relevant physical properties, such as conductivity and Young’s modulus of InAs nanowires.