Static and dynamic characteristics of 4-6 kV 4H-SiC SIAFETs

Abstract

A novel high voltage SiC MOS device named SIAFET (Static induction Injected Accumulated FET) was fabricated by using 4H-SiC, and both a high blocking voltage of 6.1 kV and a low specific on resistance (RonS) of 732 m/spl Omega/ cm/sup 2/ were achieved at the same time. Its dynamic characteristics were investigated in addition to those of a 4.5 kV SIAFET for the first time, and it was demonstrated that the influence of an injected current on the turn-off time was very small. Thus, the SIAFET was confirmed to be able to achieve not only high BV and low RonS, but also a high switching speed.