Journal of Applied Physics · 2008 · 22 citations · 18 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsTransport PhenomenaCarrier TransportDevice ModelingDevice SimulationHeat Transfer ModelingSemiconductor PhysicsThermal Properties Of SemiconductorsHeat GenerationHydrodynamic Device ModelingHydrodynamic Phonon TransportMaximum Entropy ModelingMaximum Entropy PrinciplePhonon TransportPhonon Transport SimulationSemiconductor Device Modeling
In this paper a hydrodynamic model for electron and phonon transport in silicon semiconductors has been formulated on the basis of the maximum entropy principle to describe off-equilibrium phenomena in submicron devices. One dimensional steady-state simulations of a n+−n−n+ silicon diode have been carried out.
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