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Ultraviolet Raman study of A1(LO) and E2 phonons in InxGa1−xN alloys
49
Citations
12
References
2001
Year
Aluminium NitrideEngineeringSpectroscopic PropertyIi-vi SemiconductorOptical PropertiesUltraviolet Raman StudyE2 PhononInxga1−xn AlloysMolecular Beam EpitaxyUltraviolet Raman SpectroscopyMaterials ScienceMaterials EngineeringPhysicsE2 PhononsInxga1−xn Thin FilmsNatural SciencesSpectroscopyCondensed Matter PhysicsApplied PhysicsPhononThin Films
We report on ultraviolet Raman spectroscopy of InxGa1−xN thin films grown on sapphire by metal-organic chemical vapor deposition. The A1(LO) and E2 phonon mode behavior was investigated over a large compositional range (0<x<0.50). Compelling evidence is presented for one-mode behavior for the A1(LO) phonon, and data suggestive of two-mode behavior are presented for the E2 phonon.
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