Applied Physics Letters · 2001 · 33 citations · 21 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsInorganic ChemistryThin FilmsFerroelectric CeramicsFerroelectric MaterialsThin Film Electrical PropertiesFerroelectric PropertiesFerroelectric Thin FilmsFerroelectricityHysteresisPolarizationPolarization HysteresisPolarization PropertiesThin Film Ferroelectrics
Ferroelectric strontium bismuth titanate (SrBi4Ti4O15) thin films with a high remanent polarization were produced by a chemical solution deposition method. Pt and IrO2 layers were used as substrates. It was found that ferroelectric SrBi4Ti4O15 films can be successfully fabricated on IrO2: They demonstrate a saturated hysteresis loop at 5 V with remanent polarization (Pr) of 19 μC/cm2 and coercive field (Ps) of 116 kV/cm. SrBi4Ti4O15 films grown on IrO2 show larger and denser grains and controlled surface morphology. The grains are random oriented, while those of films on Pt are mainly c-axis oriented. It is concluded that the high remanent polarization of the films grown on IrO2 originates from the relatively high concentration of a- and b-axis orientations.
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Fatigue-free ferroelectric capacitors with platinum electrodes
C. A-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan et al. · Nature · 1995 · 2.6K citations
Natural Sciences, Materials Engineering, Materials Science +14
Lanthanum-substituted bismuth titanate for use in non-volatile memories
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