Defect-induced degradation of rectification properties of aged Pt∕n-InxZn1−xOy Schottky diodes

Abstract

In this study, Pt/IZO (InxZn1−xOy) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of 105, however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations was observed from capacitance-voltage analysis and photoluminescence in the aged Pt/IZO Schottky diode. The degradation of the rectifying properties of the aged diodes originates possibly from the electron tunneling due to the increased defect concentrations.