p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy - Concepedia

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p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy

24

Citations

12

References

1998

Year

H. Ehsani, I. Bhat, Collin Hitchcock, R.J. Gutmann, G.W. Charache, Michael L. Freeman

Journal of Crystal Growth

Materials ScienceEngineeringApplied PhysicsCondensed Matter PhysicsN-type DopingGallium OxideSemiconductor MaterialMolecular Beam EpitaxyEpitaxial GrowthGa0.8in0.2sb Layers

References

	Year	Citations

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