Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge

Abstract

The reaction between nanometric Ni films and Ge is analyzed using isothermal x-ray diffraction measurements and transmission electron microscopy. It is found that NiGe is formed during deposition at room temperature. The metal rich phase that grows during heat treatment has been clearly identified to be Ni5Ge3. The simultaneous growths of Ni5Ge3 and NiGe have been observed on amorphous and polycrystalline germanium. This is in contrast with the usual sequential growth reported in thin films.