Cl[sub 2]/Ar High-Density-Plasma Damage in GaN Schottky Diodes

Abstract

Inductively coupled plasma etching of metallized GaN Schottky diodes in discharges produces reductions in both reverse breakdown voltage and Schottky barrier height. The extent of these reductions is a function of both ion energy and ion flux. Two different postetch treatments were performed in an attempt to remove the ion‐damaged GaN surface layer, namely, annealing in or UV‐ozone oxidation followed by dissolution of the oxide. Both treatments provide only partial restoration of the diode properties. © 2000 The Electrochemical Society. All rights reserved.