Applied Physics Letters · 2000 · 99 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsInorganic ChemistryMaterials ChemistryEpitaxial GrowthMetal OxidesOxide SemiconductorsSemiconductor Crystal GrowthX-ray CrystallographyX-ray DiffractionColumnar GrowthEtchingHall Effect MeasurementsMolecular Beam EpitaxySubstrate EtchingX-ray Diffraction AnalysisZinc Oxide NanostructuresZinc Oxides
Plasma-assisted molecular-beam epitaxy of ZnO epilayers on MgAl2O4(111) substrates is described. Acid mixed by H2SO4 and H3PO4 was used for the substrate etching, which provides atomically flat surfaces with a regular terrace array. The influence of the substrate on lateral growth and coalescence of ZnO islands during epitaxy is discussed with corresponding morphological and structural properties. The epitaxial relationship between the ZnO epilayer and MgAl2O4 substrate is determined as: ZnO[011̄0]∥MgAl2O4[1̄1̄2] and ZnO[21̄1̄0]∥MgAl2O4[1̄10]. X-ray diffraction, photoluminescence, and Hall-effect measurements are reported, which indicate that high-quality ZnO epilayers are obtained by using atomically flat MgAl2O4(111) substrates to suppress columnar growth.
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Optically pumped lasing of ZnO at room temperature
Darren M. Bagnall, Y. F. Chen, Z. Q. Zhu et al. · Applied Physics Letters · 1997 · 2.2K citations
High temperature excitonic stimulated emission from ZnO epitaxial layers
Darren M. Bagnall, Y. F. Chen, Z. Q. Zhu et al. · Applied Physics Letters · 1998 · 783 citations