Publication | Closed Access
A 1.8 V 2 Gb NAND flash memory for mass storage applications
14
Citations
2
References
2003
Year
Unknown Venue
Non-volatile MemoryEngineeringMicroscopyComputer ArchitectureGb NandNanoelectronicsMemory DeviceProximity CorrectionElectrical EngineeringNanotechnologyFlash MemoryComputer EngineeringMicroelectronicsCritical LayersV 2MicrofabricationApplied PhysicsMass Storage ApplicationsSemiconductor Memory
A 1.8 V 2 Gb NAND flash memory is fabricated in a 90 nm process resulting in a 141 mm/sup 2/ die and a 0.044 /spl mu/m/sup 2/ effective cell. To achieve the high level of integration, critical layers are patterned with KF photolithography and phase-shift masks with proximity correction.
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