High efficiency thin film silicon solar cell and module

Abstract

An initial efficiency of 14.5% (Jsc=14.4mA/cm/sup 2/, Voc=1.41V, FF=71.9%) has been achieved for a-Si:H/transparent inter-layer/crystalline Si solar cell (total area of 1cm/sup 2/). Both a-Si and crystalline Si films were fabricated by plasma chemical vapor deposition at low temperature. The short circuit current (Jsc) was enhanced by the introduction of transparent interlayer without increasing the thickness of a-Si:H layer. An initial aperture efficiency of 12.3% has been achieved for 910/spl times/455mm/sup 2/ a-Si/crystalline Si thin film integrated solar cell module. Reasonably high deposition rate of 11 A/s for the deposition of crystalline Si for 1/spl times/1m/sup 2/ area has been achieved. By applying a deposition conditions of this high deposition rate, an initial aperture efficiency of 11.2% has been obtained above sized Si stacked solar cell module.