Complete microcrystalline <i>p</i>-<i>i</i>-<i>n</i> solar cell—Crystalline or amorphous cell behavior?

TLDR

Intrinsic μc‑Si:H has not previously attracted much attention as a photovoltaic active material. The authors fabricated complete μc‑Si:H p‑i‑n solar cells using a very high frequency glow discharge method. The μc‑Si:H p‑i‑n cells achieved a 4.6 % efficiency with short‑circuit current densities up to 21.9 mA cm⁻², showed no degradation in light‑soaking tests, and voltage‑dependent spectral response indicates carrier transport may involve both drift and diffusion.

Abstract

Complete μc-Si:H p-i-n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic μc-Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm2 due to an enhanced absorption in the near-infrared could be obtained. First light-soaking experiments indicate no degradation for the entirely μc-Si:H cells. Voltage-dependent spectral response measurements suggest that the carrier transport in complete μc-Si:H p-i-n cells may possibly be cosupported by diffusion (in addition to drift).