AMS Acta (University of Bologna) · 1999 · 11 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsGainGallium Nitride Microwave Integrated CircuitsHigh-frequency ElectronicsLow-noise AmplifiersMillimeter-wave TransistorsNoise FigureSilicon NitrideTransconductance
High performances have been achieved at W-band with a 2-stage 0.1 um gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T-gate profile, we use silicon nitride SixNy technology, which leads to naturally passivated devices. For a drain-to-source current Ids=350mA/mm the devices demonstrate a maximum intrinsic transconductance Gm of 1600mS/mm and an intrinsic current gain cutoff frequency Fc=220GHz. The extrinsic current gain cut-off frequency Ft is 175GHz. The LNA shows a minimum noise figure of 3.3dB with an associated gain of 11.5dB at 94GHz.