2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) · 2003 · 26 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMillimeter-wave CommunicationsRadio-frequency Integrated CircuitsBicmos TechnologyHigh-frequency ElectronicsMicrowave Integrated Circuit DesignMillimeter-wave Integrated CircuitsRf Cmos DesignSige Bicmos DesignSilicon Germanium Bipolar Transistor
SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5/spl mu/m. The key component is the SiGe-base HBT whose performance (f/sub T/, f/sub MAX/) is improved to >200GHz in the 0.13/spl mu/m generation. Evolution and future directions of SiGe BiCMOS technology and product applications are reviewed.
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