0.13 μm 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS

Abstract

SiGe BiCMOS is in its fourth lithographic generation since introduction of the 0.5/spl mu/m. The key component is the SiGe-base HBT whose performance (f/sub T/, f/sub MAX/) is improved to >200GHz in the 0.13/spl mu/m generation. Evolution and future directions of SiGe BiCMOS technology and product applications are reviewed.