2005 · 39 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsGan-based High-frequency DevicesHigh-frequency ElectronicsHigh-frequency OperationHigh-gain AmplifiersMicrowave DevicesMonolithic Microwave Integrated CircuitsPower Output
GaN HEMTs with field-plates connected to the source terminal have been developed for high-gain, high-voltage operation at microwave frequencies. Due to the reduced feedback capacitance compared to the gate-terminated field-plate structures, improvement in large-signal gain of 5-7 dB is obtained. Superior performance including 21-dB associated gain, 20-W/mm output power and 60% power-added-efficiency at 4 GHz and 118V bias, is achieved simultaneously. This translates to an extremely high voltage-frequency-gain product approaching 10 kV-GHz.
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30-W/mm GaN HEMTs by Field Plate Optimization
Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations
10-W/mm AlGaN-GaN HFET with a field modulating plate
Yuji Ando, Yasuhiro Okamoto, Hiroyuki Miyamoto et al. · IEEE Electron Device Letters · 2003 · 274 citations