Spin splitting in AlxGa1−xN/GaN quasiballistic quantum wires

Abstract

We have observed beating Shubnikov–de Haas oscillations in Al0.18Ga0.82N/GaN [112¯0]-direction quantum wires grown on (0001) sapphire. The spin-splitting energy, (2.4±0.3) meV for 200 nm wire, was suppressed to (1.2±0.3) meV for 100 nm wire and smeared by the scattering from edge states and intersubbands. The spin splitting of Rashba effect can be used to control the differential phase shift of spin-polarized electrons when a gate bias is applied to a nanometer arm of quantum ring. Based on the results of spin-splitting for the [112¯0]-direction AlxGa1−xN/GaN nanowire, the spin splitting of one-dimensional electron system in AlGaN/GaN nanowire can be applied to a low-power consuming quantum-ring interferometer.