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A 146mm/sup 2/ 8Gb nand flash memory with 70nm CMOS technology
21
Citations
3
References
2005
Year
Unknown Venue
Non-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsNanotechnologyDie Size ReductionFlash MemoryComputer EngineeringCmos TechnologyComputer ArchitectureSemiconductor MemoryProgramming ThroughputBinary Flash MemoriesMicroelectronicsNand Flash Memory
A 146 mm/sup 2/ 8 Gb NANO flash memory with 4-level programmed cells is fabricated in a 70 nm CMOS technology. A single-sided pad architecture and extended block-addressing scheme without redundancy is adopted for die size reduction. The programming throughput is 6 MB/s and is comparable to binary flash memories.
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