Random telegraph signals in small gate-area p-MOS transistors

Abstract

We report the observation of random telegraph signals (RTS) in the channel resistances of nominally 1.25 μm×1.25 μm, enhancement‐mode pMOS transistors fabricated using the AT&T 1‐μm radiation hardened technology. Devices were operated in strong inversion in the linear regime. Measurements, performed for temperatures ranging from 77 to 300 K and various gate voltages, show that capture and emission times are both thermally activated and that the capture time depends strongly on the gate voltage. Results suggest that the unfilled trap is charged and that, after capturing a hole, the trap relaxes to a lower energy. Basic features of a model are discussed.