BEST: a BiCMOS-compatible super-self aligned ECL technology

Abstract

A 1.5- mu m design rule bipolar technology has been extracted from the NOVA process. This BiCMOS-compatible technology has been named BEST (bipolar enhanced self-aligned technology). ECL propagation delays of 87 ps at a power level of 2 mW/gate have been obtained. Because the active regions are not exposed to any RIE etches prior to emitter poly deposition, the crystalline and junction qualities are excellent. The result is an ultra-high-speed bipolar technology which also incorporates NPNs, PNPs, Schottky diodes, and polysilicon resistors.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>