Photoelectrochemical Etching of 6 H  ‐ SiC

Abstract

A new photoelectrochemical etching process is described for n‐type , while dark electrochemistry has been used to pattern p‐type material. In this two‐step etching process, the is first anodized to form a deep porous layer, and this layer is subsequently removed by thermal oxidation followed by an dip. Etch rates as high as 4000 Å/min for and 2.2 μm/min for have been obtained during the anodization, resulting in near mirror‐like etched surfaces.