IEEE Transactions on Device and Materials Reliability · 2015 · 12 citations · 2 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesStatisticsDevice CharacterizationDevice ModelingDevice ReliabilityDevice ScalingReliability ModelingSemiconductor ReliabilityBreakdown CharacteristicsDielectric BreakdownFeature Size ScalingPlotting PointsPower Density ScalingReliability SimulationStatistical Reliability AnalysisTime-dependent Dielectric Breakdown
In this paper, a comprehensive methodology for the statistic of SRAM Vmin is presented. A plotting method for the linearization of the statistical distributions is proposed, and methodologies for size scaling and statistical extrapolations are developed. Many analogies to the established statistical framework for time-dependent dielectric breakdown are found.
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