25 nm CMOS Omega FETs

Abstract

Low leakage and low active-power 25 nm gate length C-MOSFETs are demonstrated for the first time with a newly proposed Omega-(/spl Omega/) shaped structure, at a conservative 17-19 /spl Aring/ gate oxide thickness, and with excellent hot carrier immunity. For 1 volt operation, the transistors give drive currents of 1440 /spl mu/A//spl mu/m and 780 /spl mu/A//spl mu/m with off state leakage currents of 8 nA//spl mu/m and 0.4 nA//spl mu/m for N-FET and P-FET, respectively. A low voltage version achieves, at 0.7 V, drive currents of 1300 /spl mu/A//spl mu/m for N-FET and 550 /spl mu/A//spl mu/m for P-FET at an off current of 1 /spl mu/A//spl mu/m. N-FET gate delay (CV/I) of 0.39 ps and P-FET gate delay of 0.88 ps exceed International Technology Roadmap for Semiconductors (ITRS) projections.