physica status solidi (RRL) - Rapid Research Letters · 2013 · 231 citations · 201 references
EngineeringNanowire Growth DirectionPhotovoltaic DevicesOptoelectronic DevicesPhotovoltaic SystemPhotovoltaicsIii–v Nanowire PhotovoltaicsSemiconductor NanostructuresSemiconductorsElectronic DevicesSolar Cell StructuresCompound SemiconductorMaterials ScienceSemiconductor TechnologyElectrical EngineeringSolar PowerOther Nanowire DevicesApplied PhysicsBuilding-integrated PhotovoltaicsNanowire PvSolar Cell Materials
Abstract magnified image This article reviews recent developments in nanowire‐based photovoltaics (PV) with an emphasis on III–V semiconductors including growth mechanisms, device fabrication and performance results. We first review the available nanowire growth methods followed by control of nanowire growth direction and crystal structure. Important device issues are reviewed, including optical absorption, carrier collection, strain accommodation, design for high efficiency, tunnel junctions, Ohmic contact formation, passivation and doping. Performance data of III–V nanowire cells and the primary challenges in nanowire PV are summarized. Many of the issues discussed here are also applicable to other nanowire devices such as photodetectors. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Detailed Balance Limit of Efficiency of<i>p-n</i>Junction Solar Cells
W. Shockley, H. J. Queisser · Journal of Applied Physics · 1961 · 12.6K citations