Journal of Applied Physics · 2004 · 115 citations · 11 references
Materials ScienceMaterials EngineeringOxide HeterostructuresMaterial AnalysisEngineeringEpitaxial GrowthOxide ElectronicsSurface ScienceApplied PhysicsCondensed Matter PhysicsEpitaxial StrainThin La0.7sr0.3mno3 FilmsThin Film Process TechnologyThin FilmsPulsed Laser DepositionBiaxial StrainUltrathin FilmsThin Film Processing
In this paper, we illustrate an approach to discriminate between epitaxial strain and other factors responsible for the decrease of the metal–insulator transition temperature (TP) in thin La0.7Sr0.3MnO3 films grown by pulsed laser deposition. Using this approach, we have estimated the effect of the biaxial strain on TP. Ultrathin films, independent of epitaxial strain, do not show any metal–insulator transition over the full temperature range. This finding confirms the existence of an interface dead layer. The strain-independent decrease in TP, relative to its bulk value, observed for a much wider thickness range (up to about 1000Å) can most likely be attributed to oxygen deficiency.
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