Dead Layer Effects is a phenomenon in semiconductor detectors characterized by the reduced sensitivity to incident radiation due to an inactive surface region that prevents charge collection, distinguishing it from bulk detection processes by its location-specific attenuation of signal generation.
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336
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2017–2026
26
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199
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336
Centre National de la Recherche Scientifique
Paris, France
13 h-index
50 publications
1.2K citations
Oak Ridge National Laboratory
Oak Ridge, United States
8 h-index
25 publications
1.2K citations
Institute of Physics
Beijing, China
7 h-index
29 publications
1.5K citations
Chinese Academy of Sciences
Beijing, China
6 h-index
36 publications
1.4K citations
University of Wisconsin–Madison
Madison, United States
6 h-index
15 publications
331 citations
Argonne National Laboratory
Lemont, United States
5 h-index
14 publications
372 citations
National Laboratory for Superconductivity
Beijing, China
4 h-index
21 publications
1.2K citations
National Institute of Standards and Technology
Gaithersburg, United States
4 h-index
8 publications
364 citations
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- Applied Physics Letters
29 publications · 1.8K citations
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- Journal of Applied Physics
29 publications · 1.3K citations
21
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- Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
12 publications · 479 citations
11
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- Physical Review B
PRB · 8 publications · 527 citations
8
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- IEEE Transactions on Nuclear Science
7 publications · 183 citations
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