A 56–65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs

Abstract

In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using 100 nm AlGaN/GaN dual-gate HEMTs. For the fabricated dual-stage amplifier a continuous wave saturated output power of up to 24.8 dBm (0.84 W/mm) at 63 GHz for 20 V drain bias was measured. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.