C. Haupt - Concepedia

Author

C. Haupt

Fraunhofer Institute for Applied Solid State Physics

Also Known As

C Haupt, C. Haupt, Carl Haupt

Publications

176

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics Karlsruhe Institute of Technology Fraunhofer-Gesellschaft

About

C. Haupt is an author at Fraunhofer Institute for Applied Solid State Physics specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	138
2	Electrical Engineering	7	7	138
3	Applied Physics	3	3	62
4	Computer Engineering	1	1	27
5	Integrated Circuits	1	1	25

C. Haupt

Publications

167

Citations

H-Index

Page 1

	Year	Citations
GaN HEMTs and MMICs for space applications Patrick Waltereit, W. Bronner, R. Quay, Semiconductor Science and Technology	2013	29
High Efficiency Digital GaN MMIC Power Amplifiers for Future Switch-Mode Based Mobile Communication Systems S. Maroldt, C. Haupt, Rudolf Kiefer, Electrical EngineeringGan HemtsEngineeringRf SemiconductorDrain Efficiency	2009	27
Dual-Gate GaN MMICs for MM-Wave Operation R. Quay, A. Tessmann, Rudolf Kiefer, IEEE Microwave and Wireless Components Letters Dual-gate Gan MmicsMicrowave CircuitsElectrical EngineeringMillimeter-wave OperationGan Hemts	2011	25
Development of a high transconductance GaN MMIC technology for millimeter wave applications C. Haupt, S. Maroldt, R. Quay, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Millimeter Wave ApplicationsWide-bandgap SemiconductorElectrical EngineeringMillimeter Wave TechnologyEngineering	2010	23
Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm‐wave applications Peter Brückner, Rudolf Kiefer, C. Haupt, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorMm‐wave Applications	2012	20
A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology Ingmar Kallfass, Ştefan Wagner, Dirk Schwantuschke, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorLinear 84	2011	19
A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology Ingmar Kallfass, R. Quay, Ştefan Wagner, 2011 IEEE MTT-S International Microwave Symposium Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorCompact Single-chip Receiver	2011	14
A 56–65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs D. Schwantusche, C. Haupt, Rudolf Kiefer, Continuous WaveWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor	2011	10

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