A systematic approach of statistical modeling and its application to CMOS circuits

Abstract

A systematic approach of statistical modeling is developed to analyze and model statistical variations of CMOS transistor model parameters for statistical circuit simulation. The proposed methodology is based on several standard statistical techniques, and its accuracy and efficiency are verified by several examples. The efficiency of the method lies in the reduction of dimensions of parameter space without losing much statistical information.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>